Stationary and Transient Simulations for a One-Dimensional Resonant Tunneling Diode
نویسندگان
چکیده
We investigate the validity of stationary simulations for semiconductor quantum charge transport in a one-dimensional resonant tunneling diode via fluid type models. Careful numerical investigations to a quantum hydrodynamic model reveal that the transient simulations do not always converge to the steady states. In particular, growing oscillations are observed at relatively large applied voltage. A dynamical bifurcation is responsible for the stability interchange of the steady state. Transient and stationary computations are also performed for a unipolar quantum drift-diffusion model. PACS: 02.60.Cb, 73.63.-b, 02.30.Jr
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Article history: Received 16 May 2012 Received in revised form 20 October 2012 Accepted 11 December 2012 Available online 22 December 2012
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